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DISCRETE SEMICONDUCTORS
DATA SHEET
BLY89C VHF power transistor
Product specification August 1986
Philips Semiconductors
Product specification
VHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V. It has a 3/8" capstan envelope with a ceramic cap. All leads are isolated from the stud.
BLY89C
QUICK REFERENCE DATA R.F. performance up to Th = 25 C in an unneutralized common-emitter class-B circuit MODE OF OPERATION c.w. PIN CONFIGURATION VCC V 13,5 f MHz 175 PL W 25 Gp dB >6 % >70 zi 1,6 + j1,4 YL mS 210 + j5,5
PINNING - SOT120 PIN DESCRIPTION collector emitter base emitter
halfpage
4
1 2 3
1
3
handbook, halfpage
c
4
b
MBB012
e
2
MSB056
Fig.1 Simplified outline and symbol.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
VHF power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (average) Collector current (peak value); f > 1 MHz R.F. power dissipation (f > 1 MHz); Tmb = 25 C VCESM VCEO VEBO IC(AV) ICM Prf max max max max max max
BLY89C
36 V 18 V 4V 6A 12 A 73 W
MGP864
handbook, halfpage
10
handbook, halfpage
80
MGP865
IC (A)
Prf (W) 60 Th = 70 C Tmb = 25 C
derate by 0.38 W/K derate by 0.29 W/K
40
1 1 10 VCE (V) 102
20 0 50 Th (C) 100
I
Continuous d.c. operation
II Continuous r.f. operation III Short-time operation during mismatch
Fig.2 D.C. soar.
Fig.3
R.F. power dissipation; VCE 16,5 V; f > 1 MHz.
THERMAL RESISTANCE (dissipation 20 W; Tmb = 79 C, i.e. Th = 70 C) From junction to mounting base (d.c. dissipation) From junction to mounting base (r.f. dissipation) From mounting base to heatsink Rth j-mb(dc) Rth j-mb(rf) Rth mb-h = = = 3,1 K/W 2,3 K/W 0,45 K/W
August 1986
3
Philips Semiconductors
Product specification
VHF power transistor
CHARACTERISTICS Tj = 25 C Breakdown voltage Collector-emitter voltage VBE = 0; IC = 25 mA Collector-emitter voltage open base; IC = 50 mA Emitter-base voltage open collector; IE = 10 mA Collector cut-off current VBE = 0; VCE = 18 V Transient energy L = 25 mH; f = 50 Hz open base -VBE = 1,5 V; RBE = 33 D.C. current gain(1) hFE voltage(1) VCEsat typ 1,7 V typ 50 10 to 80 E E > > ICES < V(BR)EBO > 4V V(BR)CEO > 18 V V(BR)CES > 36 V
BLY89C
10 mA
8 ms 8 ms
IC = 2,5 A; VCE = 5 V Collector-emitter saturation IC = 7,5 A; IB = 1,5 A Transition frequency at f = 100 MHz(1) IC = 2,5 A; VCE = 13,5 V IC = 7,5 A; VCE = 13,5 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 15 V Feedback capacitance at f = 1 MHz IC = 100 mA; VCE = 15 V Collector-stud capacitance Note 1. Measured under pulse conditions: tp 200 s; 0,02.
fT fT
typ typ
800 MHz 750 MHz
Cc
typ <
65 pF 90 pF
Cre Ccs
typ typ
41 pF 2 pF
August 1986
4
Philips Semiconductors
Product specification
VHF power transistor
BLY89C
MGP866
handbook, halfpage
75
MGP867
typical values Tj = 25 C VCE = 13.5 V 5V
handbook, halfpage
200
IE = Ie = 0 f = 1 MHz
hFE
Cc (pF)
50
100 typ 25
0 0 5 10 IC (A) 15
0 0 10 VCB (V) 20
Fig.4
Fig.5
handbook, full pagewidth
1000
MGP868
VCE = 13.5 V typ f = 100 MHz Tj = 25 C
fT (MHz)
500
0 0 5 10 IC (A) 15
Fig.6
August 1986
5
Philips Semiconductors
Product specification
VHF power transistor
APPLICATION INFORMATION R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit) Th = 25 C f (MHz) 175 175 VCC (V) 13,5 12,5 PL(W) 25 25 PS(W) < 6,25 - Gp (dB) > 6 typ 6,6 IC (A) < 2,64 - > (%) 70 typ 75 zi () 1,6 + j1,4 -
BLY89C
YL (mS) 210 + j5,5 -
handbook, full pagewidth
C1 50
L1 C2
,, ,, ,,
C3a L5 L4 T.U.T. L2 C3b L6 C4 C5 L3 L8 +VCC
C6a C7 50 C8
L7
C6b
R2
R1
MGP604
Fig.7 Test circuit for 175 MHz.
List of components: C1 = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004) C2 = C8 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008) C3a = C3b = 47 pF ceramic capacitor (500 V) C4 = 120 pF ceramic capacitor C5 = 100 nF polyester capacitor C6a = C6b = 8,2 pF ceramic capacitor (500 V) C7 = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011) L1 = 1 turn enamelled Cu wire (1,6 mm); int. dia. 9,0 mm; leads 2 x 5 mm L2 = 100 nH; 7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2 x 5 mm L3 = L8 = Ferroxcube choke coil (cat. no. 4312 020 36640) L4 = L5 = strip (12 mm x 6 mm); taps for C3a and C3b at 5 mm from transistor L6 = 2 turns enamelled Cu wire (1,6 mm); int. dia. 5,0 mm; length 6,0 mm; leads 2 x 5 mm L7 = 2 turns enamelled Cu wire (1,6 mm); int. dia. 4,5 mm; length 6,0 mm; leads 2 x 5 mm L4 and L5 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16". R1 = 10 (10%) carbon resistor R2 = 4,7 (5%) carbon resistor
August 1986
6
Philips Semiconductors
Product specification
VHF power transistor
BLY89C
150
handbook, full pagewidth
72
L3 C4 R1 L2 C1 C2 L1 L4 L5 L7 C3b C3a L6
L8
+VCC R2
C5 C6a
C7 C8 C6b
rivet
MGP808
Fig.8 Component layout and printed-circuit board for 175 MHz test circuit.
The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu straps are used for a direct contact between upper and lower sheets.
August 1986
7
Philips Semiconductors
Product specification
VHF power transistor
BLY89C
MGP869
handbook, halfpage
50
f = 175 MHz typical values Th = 25 C
VCC = 13.5 V VCC = 12.5 V
handbook, halfpage
15
MGP870
PL (W)
Gp (dB) 10
f = 175 MHz Th = 25 C typical values
150 (%) 100
VCC = 13.5 V VCC = 12.5 V
Gp
25
Th = 70 C 5 50
0 0 5 10 PS (W) 15
0 0 20 PL (W)
0 40
Fig.9
Fig.10
Conditions for R.F. SOAR f = 175 MHz Th = 70 C Rth mb-h = 0,45 K/W VCCnom = 13,5 V PS = PSnom at VCCnom = 13,5 V and VSWR = 1 The transistor has been developed for use with unstabilized supply voltages. As the output power and drive power increase with the supply voltage, the nominal output power must be derated in accordance with the graph for safe operation at supply voltages other than the nominal. The graph shows the permissible output power under nominal conditions (VSWR = 1), as a function of the expected supply over-voltage ratio with VSWR as parameter. The graph applies to the situation in which the drive (PS/PSnom) increases linearly with supply over-voltage ratio.
MGP871
handbook, halfpage
40
PLnom (W) VSWR = 1 30
VSWR = 10 50
20
10 PS PSnom 0 1 1.1 1.2 VCC VCCnom 1.3
Fig.11 R.F. soar.
August 1986
8
Philips Semiconductors
Product specification
VHF power transistor
OPERATING NOTE Below 50 MHz a base-emitter resistor of 10 is recommended to avoid oscillation. This resistor must be effective for r.f. only.
BLY89C
handbook, halfpage
20
MGP872
Gp (dB) 15
power gain versus frequency (class-B operation)
10
5
0 0 100 200 f (MHz) 300
VCC = 13,5 V PL = 25 W Th = 25 C typical values
Fig.12
MGP873
handbook, halfpage impedance (series components) input
5
handbook, halfpage impedance (parallel components) load
10
MGP874
500 CL (pF) 250
versus frequency (class-B operation) ri, xi () ri
RL () 7.5
versus frequency (class-B operation)
xi ri
RL CL RL
0
5
0
xi 2.5
CL
-250
-5
0 0 100 200 f (MHz) 300 0 100 200 f (MHz)
-500 300
VCC = 13,5 V PL = 25 W Th = 25 C typical values
VCC = 13,5 V PL = 25 W Th = 25 C typical values
Fig.13
Fig.14
August 1986
9
Philips Semiconductors
Product specification
VHF power transistor
PACKAGE OUTLINE Studded ceramic package; 4 leads
D
BLY89C
SOT120A
A Q c
N1 N
D1 D2
A w1 M A M W
N3 X H b detail X M1
4 L
3 H 1
2
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm A 5.97 4.74 b 5.90 5.48 c 0.18 0.14 D 9.73 9.47 D1 8.39 8.12 D2 9.66 9.39 H 27.44 25.78 L 9.00 8.00 M 3.41 2.92 M1 1.66 1.39 N 12.83 11.17 N1 1.60 0.00 N3 3.31 2.54 0.130 0.100 Q 4.35 3.98 0.171 0.157 W w1 0.38 8-32 UNC 0.015
inches 0.283 0.248
0.232 0.007 0.216 0.004
0.383 0.330 0.380 1.080 0.373 0.320 0.370 1.015
0.354 0.134 0.315 0.115
0.065 0.505 0.063 0.055 0.440 0.000
OUTLINE VERSION SOT120A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
August 1986
10
Philips Semiconductors
Product specification
VHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLY89C
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
August 1986
11

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